Chinese researchers boost ferroelectric memory endurance 100-fold for AI chips

Chinese researchers demonstrated over 10 billion write cycles in wurtzite ferroelectrics, a 100-fold improvement over previous limits, potentially removing a key reliability barrier for next-gen memory in AI and high-performance computing. The breakthrough is unverified by independent replication and its commercial impact depends on integration with existing semiconductor processes. This advances China's semiconductor self-sufficiency efforts amid US export controls.